THE SI(111)-PD INTERFACE - SPECTROSCOPIC EVIDENCE OF CHEMICAL PROCESSES AT LIQUID-NITROGEN TEMPERATURE

被引：24

作者：

ABBATI, I ^{[1
]}

BRAICOVICH, L ^{[1
]}

DEMICHELIS, B ^{[1
]}

PENNINO, UD ^{[1
]}

机构：

[1] UNIV MODENA,IST FIS,I-41100 MODENA,ITALY

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1980年 / 17卷 / 06期

关键词：

Compendex;

D O I：

10.1116/1.570659

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

SEMICONDUCTING SILICON

引用

页码：1303 / 1305

页数：3

共 11 条

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[2]

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[3]

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[7]

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[8] MICROSCOPIC COMPOUND FORMATION AT THE PD-SI(111) INTERFACE [J].

FREEOUF, JL ;

RUBLOFF, GW ;

HO, PS ;

KUAN, TS .

PHYSICAL REVIEW LETTERS, 1979, 43 (24) :1836-1839

[9] CHEMICAL AND STRUCTURAL-PROPERTIES OF THE PD-SI INTERFACE DURING THE INITIAL-STAGES OF SILICIDE FORMATION [J].

HO, PS ;

TAN, TY ;

LEWIS, JE ;

RUBLOFF, GW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1120-1124

[10]

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