SURFACE PROCESSES IN LASER-ATOMIC LAYER EPITAXY (LASER-ALE) OF GAAS

被引：17
|
作者：
MEGURO, T
SUZUKI, T
OZAKI, K
OKANO, Y
HIRATA, A
YAMAMOTO, Y
IWAI, S
AOYAGI, Y
NAMBA, S
机构：
[1] WASEDA UNIV,SCH SCI & ENGN,SHINJUKU KU,TOKYO 160,JAPAN
[2] HOSEI UNIV,COLL ENGN,TOKYO 142,JAPAN
[3] HOSEI UNIV,ION BEAM TECHNOL RES CTR,TOKYO 142,JAPAN
来源：
JOURNAL OF CRYSTAL GROWTH | 1988年 / 93卷 / 1-4期
关键词：
Crystals--Epitaxial Growth - Laser Beams--Applications - Surface Phenomena;
D O I：
10.1016/0022-0248(88)90526-X
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We have studied surface processes of the laser-atomic layer epitaxy (laser-ALE) of GaAs with results from the wavelength dependence of the incident laser beam using triethylgallium (TEG) and arsine (AsH3) as source gases. Experimental results indicate that the layer-by-layer controlled ALE growth of GaAs on the GaAs substrate can be proceeded under visible wavelength laser irradiation. The possible mechanisms of the laser-ALE is the 'site-selective-decomposition' process in which the decomposition of the alkylgallium on the As-terminated surface is enhanced compared with that on the Ga-terminated surface.
引用
收藏
页码：190 / 194
页数：5
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