EFFECT OF THE ANISOTROPIC FORM-FACTOR ON THE PHONON-ELECTRON INTERACTION AND PHONON TRANSPORT IN AS-DOPED GE

Usually the phonon-electron relaxation rates in doped semiconductors are calculated by taking a spherical approximation for the conduction-band minima. In the present work we have revoked this approximation and obtained more general expressions for the phonon-electron relaxation rates. Using these expressions, we have calculated the phonon conductivity of As-doped germanium and shown that our approach improves the theoretical value of the phonon conductivity by 30-40% even at 10 K.