Relationship of surface-state band structure to surface atomic configuration of zinc blende (110)

被引:62
作者
Levine, J. D. [1 ]
Freeman, S. [1 ]
机构
[1] RCA Labs, Princeton, NJ 08540 USA
来源
PHYSICAL REVIEW B-SOLID STATE | 1970年 / 2卷 / 08期
关键词
D O I
10.1103/PhysRevB.2.3255
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Intrinsic surface-state band structure has been computed for zinc blende (110) from an adaptation of the Slater-Koster representation of the bulk electronic states. In particular, s orbitals are assigned to the M ions, and p(x), p(y), p(z), orbitals to the X ions; the bulk conduction band is then M-like and the valence band is X-like with the correct symmetry. Also, the zone center bandgap and curvature are adjusted to fit experiment or other theory. In this scheme, it has proved possible to explicitly include displacements of M and X surface ions from their ideal positions, consistent with the low-energy electron-diffraction (LEED) result that no reduction of the surface periodicity takes place (no new spots are observed). It was found that both M (acceptor)-like and X (donor)-like surface-state bands appeared most easily when such ion displacements were combined with the modification of the surface "Coulomb integrals" customarily considered. To a first approximation, both M- and X-like surface-state effective masses are found equal to those of the adjoining bulk bands. An analysis such as this is shown to interrelate surface ion geometry with surface electrical properties. In the present case, we find indications that the X (M) ion is displaced into (out of) the nominal surface plane.
引用
收藏
页码:3255 / 3272
页数:18
相关论文
共 40 条
[1]   SURFACE STATES OF ONE-DIMENSIONAL CRYSTALS .3. [J].
AERTS, E .
PHYSICA, 1960, 26 (12) :1063-1072
[2]  
AERTS E, 1960, PHYSICA, V26, P1047, DOI 10.1016/0031-8914(60)90137-3
[3]  
AERTS E, 1960, PHYSICA, V26, P1057, DOI 10.1016/0031-8914(60)90138-5
[4]   ON THEORY OF SURFACE STATES OF ELECTRONS IN SEMICONDUCTORS [J].
BARTOS, I .
SURFACE SCIENCE, 1969, 15 (01) :94-&
[5]  
Callaway J., 1964, ENERGY BAND THEORY
[6]   ELECTRONIC SURFACE STATES IN GERMANIUM AND SILICON [J].
CHAVES, CM ;
MAJLIS, N ;
CARDONA, M .
SOLID STATE COMMUNICATIONS, 1966, 4 (06) :271-&
[7]   INVESTIGATIONS OF SURFACE STABILITY OF 2-6 WURTZITE COMPOUNDS BY LEED [J].
CHUNG, MF ;
FARNSWORTH, HE .
SURFACE SCIENCE, 1970, 22 (01) :93-+
[8]   BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES [J].
COHEN, ML ;
BERGSTRESSER, TK .
PHYSICAL REVIEW, 1966, 141 (02) :789-+
[9]  
DAVISON SG, 1970, SOLID STATE PHYS, V25, P7
[10]   CYCLOTRON RESONANCE OF ELECTRONS AND HOLES IN SILICON AND GERMANIUM CRYSTALS [J].
DRESSELHAUS, G ;
KIP, AF ;
KITTEL, C .
PHYSICAL REVIEW, 1955, 98 (02) :368-384