EFFECTS OF DEEP IMPURITIES ON N+P JUNCTION REVERSE-BIASED SMALL-SIGNAL CAPACITANCE

被引：128
作者：
SCHIBLI, E
MILNES, AG
机构：
来源：
SOLID-STATE ELECTRONICS | 1968年 / 11卷 / 03期
关键词：
D O I：
10.1016/0038-1101(68)90044-0
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：323 / +
页数：1
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