CALCULATIONS ON DEPOSITION AND REDEPOSITION IN PLASMA ETCH PROCESSES

被引：19
|
作者：
HUBNER, H
机构：
[1] Siemens AG, D-8000 Miinchen 83
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1992年 / 139卷 / 11期
关键词：
modelling; pattern formation; plasma deposition; sputter etching; surface topography ion-surface impact;
D O I：
10.1149/1.2069072
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Sidewall films can be formed during etching by redeposition of etch products and sputtered material from the bottom of the etched structure, by deposition of material sputtered from the mask edge, or by deposition of material from the plasma space. For each process the geometrical characteristics are calculated. A discussion of the spacial and temporal development of the sidewall films due to the three mechanisms is given.
引用
收藏
页码：3302 / 3309
页数：8
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