ANNEALING STUDY OF THE ELECTRON-IRRADIATION-INDUCED DEFECTS H4 AND E11 IN INP - DEFECT TRANSFORMATION (H4-E11)-]H4'

Capacitance spectroscopy has been used to study the two dominant deep levels, H4 and E11, produced in InP by low-energy electron irradiation. The annealing rates of H4 and E11 in the p-type material are found to be identical, as is also the dependence on free-carrier recombination and on the chemical nature of the acceptor (Cd or Zn). Recombination-enhanced annealing converts these traps to a hole trap H4, which is not detectable by conventional deep-level transient spectroscopy. Its emission and capture properties are measured and analyzed. The similarity of the creation and annealing behavior of H4 and E11 shows that they share a common point defect. Our results lead to the tentative identification of the defect as a phosphorous vacancy-acceptor complex and we show how this may anneal to the H4 center. © 1990 The American Physical Society.