CORRELATION OF GEOMETRICAL STRUCTURE AND ELECTRONIC PROPERTIES AT CLEAN SEMICONDUCTOR SURFACES

被引：56
作者：
MONCH, W [1 ]
机构：
[1] GESAMT HSCH DUISBURG,FESTKORPERPHYS LAB,D-4100 DUISBURG,FED REP GER
来源：
SURFACE SCIENCE | 1977年 / 63卷 / 01期
关键词：
D O I：
10.1016/0039-6028(77)90328-4
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
收藏
页码：79 / 95
页数：17
相关论文
共 59 条
[1]   COMPARISON OF PHOTOELECTRIC PROPERTIES OF CLEAVED HEATED + SPUTTERED SILICON SURFACES [J].
ALLEN, FG ;
GOBELI, GW .
JOURNAL OF APPLIED PHYSICS, 1964, 35 (3P1) :597-&
[2]   WORK FUNCTION, PHOTOELECTRIC THRESHOLD, AND SURFACE STATES OF ATOMICALLY CLEAN SILICON [J].
ALLEN, FG ;
GOBELI, GW .
PHYSICAL REVIEW, 1962, 127 (01) :150-&
[3]   SI(2X1) SURFACE - THEORY OF ITS SPECTROSCOPY [J].
APPELBAUM, JA ;
HAMANN, DR .
PHYSICAL REVIEW B, 1975, 12 (04) :1410-1417
[4]  
APPELBAUM JA, 1968, SURFACE SCI, V10, P215
[5]  
Assmann J., 1974, Electronica y Fisica Aplicada, V17, P128
[6]  
Auer P.P., 1974, JAPAN J APPL PHYS 2, V2, P397
[7]  
AUER PL, TO BE PUBLISHED
[8]   TEMPERATURE DEPENDENCE OF WORK FUNCTION OF SILICON [J].
BACHMANN, R .
PHYSIK DER KONDENSITERTEN MATERIE, 1968, 8 (01) :31-+
[9]  
BAUERLE F, 1972, J APPL PHYS, V43, P3917
[10]   SURFACE PHOTOVOLTAGE SPECTROSCOPY OF ELECTRONIC SURFACE STATES ON CLEAVED GERMANIUM (111) SURFACES [J].
BUCHEL, M ;
LUTH, H .
SURFACE SCIENCE, 1975, 50 (02) :451-464
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