NUCLEATION AND GROWTH OF ALN ON SILICA AND SI(100)

被引:0
|
作者
ROGERS, JW [1 ]
BARTRAM, ME [1 ]
MICHALSKE, TA [1 ]
MAYER, TM [1 ]
机构
[1] SANDIA NATL LABS,ALBUQUERQUE,NM 87185
关键词
D O I
暂无
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
引用
收藏
页码:118 / COLL
相关论文
共 50 条
  • [1] MECHANISM OF NUCLEATION AND ATOMIC LAYER GROWTH OF ALN ON SI
    MAYER, TM
    ROGERS, JW
    MICHALSKE, TA
    CHEMISTRY OF MATERIALS, 1991, 3 (04) : 641 - 646
  • [2] NUCLEATION AND GROWTH OF ELONGATED SI ISLANDS ON SI(100)
    KLEBAN, P
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (04): : 2436 - 2439
  • [3] MBE Growth of AlN Nanowires on Si Substrates by Aluminizing Nucleation
    E, Yanxiong
    Hao, Zhibiao
    Yu, Jiadong
    Wu, Chao
    Liu, Runze
    Wang, Liu
    Xiong, Bing
    Wang, Jian
    Han, Yanjun
    Sun, Changzheng
    Luo, Yi
    NANOSCALE RESEARCH LETTERS, 2015, 10
  • [4] MBE Growth of AlN Nanowires on Si Substrates by Aluminizing Nucleation
    Yanxiong E
    Zhibiao Hao
    Jiadong Yu
    Chao Wu
    Runze Liu
    Lai Wang
    Bing Xiong
    Jian Wang
    Yanjun Han
    Changzheng Sun
    Yi Luo
    Nanoscale Research Letters, 2015, 10
  • [5] NUCLEATION, GROWTH AND THE INTERMEDIATE LAYER IN AG/SI(100) AND AG SI(111)
    HANBUCKEN, M
    FUTAMOTO, M
    VENABLES, JA
    SURFACE SCIENCE, 1984, 147 (2-3) : 433 - 450
  • [6] SI BINDING AND NUCLEATION ON SI(100)
    BEDROSSIAN, PJ
    PHYSICAL REVIEW LETTERS, 1995, 74 (18) : 3648 - 3651
  • [7] Initial Stages of Growth of Semipolar AlN on a Nanopatterned Si(100) Substrate
    V. N. Bessolov
    E. V. Konenkova
    T. A. Orlova
    S. N. Rodin
    Semiconductors, 2021, 55 : 812 - 815
  • [8] Initial Stages of Growth of Semipolar AlN on a Nanopatterned Si(100) Substrate
    Bessolov, V. N.
    Konenkova, E., V
    Orlova, T. A.
    Rodin, S. N.
    SEMICONDUCTORS, 2021, 55 (10) : 812 - 815
  • [9] Impurity Effects on Nucleation and Growth of SiC Clusters and Layers on Si(100) and Si(111)
    Pezoldt, J.
    Lubov, M. N.
    Kharlamov, V. S.
    PHYSICS OF THE SOLID STATE, 2019, 61 (12) : 2468 - 2472
  • [10] Impurity Effects on Nucleation and Growth of SiC Clusters and Layers on Si(100) and Si(111)
    J. Pezoldt
    M. N. Lubov
    V. S. Kharlamov
    Physics of the Solid State, 2019, 61 : 2468 - 2472