MECHANISM OF SILICON EPITAXIAL LAYER GROWTH FROM ION-MOLECULAR BEAMS

被引：0
|
作者：
ALEKSANDROV, LN [1 ]
LUTOVICH, AS [1 ]
BELORUSETS, ED [1 ]
机构：
[1] ARIFOV ELECTR INST,TASHKENT,UZSSR
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1979年 / 54卷 / 02期
关键词：
D O I：
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中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
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页码：463 / 469
页数：7
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