ELECTRON-SPIN RESONANCE IN ZINCBLENDE SEMICONDUCTORS UNDER UNIAXIAL-STRESS

We present a study of the effect of uniaxial stress on the electric-dipole spin resonance in zinc-blende semiconductors. The stress-induced spin-orbit coupling of the conduction electrons gives rise to a large enhancement of the spin resonance intensity. Previous workers have used this effect to measure the strength, C2, of the coupling. Omission of a significant term in the electron-photon coupling has led to underestimates of C2 by factors ranging from 3 to 4. We discuss the origin of this discrepancy and the possibility of a determination of C2 by taking advantage of an interference between stress-induced and stress-free transition amplitudes.