THE ELECTRICAL-PROPERTIES OF SUBHUNDRED ANGSTROM SIO2/SI3N4/SIO2 DIELECTRIC FILMS FABRICATED BY DIFFERENT REOXIDATION PROCESSES

被引：0
|
作者：
TENG, KW [1 ]
NGUYEN, BY [1 ]
TOBIN, PJ [1 ]
机构：
[1] MOTOROLA INC,ADV PROD RES & DEV LAB,AUSTIN,TX 78721
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 11期
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D O I：
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中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
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页码：C446 / C446
页数：1
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