CRYSTALLOGRAPHIC PROPERTIES OF AS GROWN CDXHG1-XTE EPITAXIAL LAYERS DEPOSITED BY CATHODIC SPUTTERING

被引：14
|
作者：
ROUSSILLE, R
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1982年 / 56卷 / 01期
关键词：
D O I：
10.1016/0022-0248(82)90017-3
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：101 / 107
页数：7
相关论文
共 50 条
  • [1] CDXHG1-XTE FILMS BY CATHODIC SPUTTERING
    KRAUS, H
    PARKER, SG
    SMITH, JP
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (06) : 616 - &
  • [2] AN RBS AND CHANNELING STUDY OF EPITAXIAL LAYERS OF CDXHG1-XTE GROWN ON GAAS
    AVERY, AJ
    DISKETT, DJ
    GIESS, J
    IRVINE, SJC
    JOURNAL OF CRYSTAL GROWTH, 1990, 101 (1-4) : 56 - 60
  • [3] CDXHG1-XTE EPITAXIAL LAYERS AS INFRARED DETECTORS
    IGRAS, E
    PERSAK, T
    PIOTROWSKI, J
    THIN SOLID FILMS, 1976, 36 (02) : 486 - 486
  • [4] Properties of epitaxial CdxHg1-xTe layers grown from the vapor phase in a quasi-closed system
    Golovin, SV
    Gorshkov, AV
    Bovina, LA
    Boltar, KO
    Stafeev, VI
    JOURNAL OF OPTICAL TECHNOLOGY, 1996, 63 (06) : 462 - 463
  • [5] SURFACE-DEFECTS OF CLOSED-SYSTEM-GROWN CDXHG1-XTE EPITAXIAL LAYERS
    IVANOVOMSKII, VI
    OGORODNIKOV, VK
    ROZUMNYI, VD
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 76 (01): : 71 - 74
  • [6] THE PROPERTIES OF GOLD IN BRIDGMAN GROWN CDXHG1-XTE
    JONES, CL
    CAPPER, P
    QUELCH, MJT
    BROWN, M
    JOURNAL OF CRYSTAL GROWTH, 1983, 64 (03) : 417 - 432
  • [7] Thermal annealing impact on the properties of CdxHg1-xTe epitaxial layers with anodic oxidation
    Iluseynov, E. K.
    Eminov, Sh. O.
    Radjabli, A. A.
    Isamyilov, N. D.
    Ibragimov, T. I.
    19TH INTERNATIONAL CONFERENCE ON PHOTOELECTRONICS AND NIGHT VISION DEVICES, 2007, 6636
  • [8] ELECTRICAL AND PHOTOELECTRIC PROPERTIES OF GRADED-GAP EPITAXIAL CDXHG1-XTE LAYERS
    PAWLIKOWSKI, JM
    THIN SOLID FILMS, 1977, 44 (03) : 241 - 276
  • [9] Photoelectrical properties of CdxHg1-xTe epitaxial layers irradiated by nanosecond laser pulses
    Academy of Sciences of the Ukraine, Kiev, Ukraine
    Semicond Sci Technol, 1 (61-64):
  • [10] THE TUBULAR STRUCTURE OF GROWTH DEFECTS OF CDXHG1-XTE EPITAXIAL LAYERS
    KRAPUKHIN, VV
    STAFEYEV, VI
    BOVINA, LA
    KAGAN, NB
    LYUBCHENKO, AV
    KRISTALLOGRAFIYA, 1982, 27 (02): : 400 - 402
12345