STRUCTURAL-PROPERTIES OF THIN CAF2 AND LAF3 FILMS FORMED BY MOLECULAR-BEAM EPITAXY ON SI (111)

被引：0
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作者：
SELLAM, F
BAUNACK, S
机构：
来源：
VIDE-SCIENCE TECHNIQUE ET APPLICATIONS | 1992年 / 48卷 / 263期
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中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Growth conditions are described for producing high quality crystalline films of CaF2 and LaF3 on Si (111) substrats by molecular beam epitaxy (MBE). Rutherford backscattering/channeling, reflection high energy electron diffraction, secondary ion mass spectroscopy, Auger electron spectroscopy, transmission and scanning electron microscopy are used as diagnostic techniques to probe the structural properties of the films.
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页码：305 / 314
页数：10
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