SOME FEATURES OF LASER ANNEALING OF IMPLANTED SILICON LAYERS

被引：87
|
作者：
KHAIBULLIN, IB [1 ]
SHTYRKOV, EI [1 ]
ZARIPOV, MM [1 ]
BAYAZITOV, RM [1 ]
GALJAUTDINOV, MF [1 ]
机构：
[1] ACAD SCI USSR, KAZAN PHYS TECH INST, KAZAN BRANCH, KAZAN, RUSSIA
来源：
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1978年 / 36卷 / 3-4期
关键词：
D O I：
10.1080/00337577808240852
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
Comparative investigation of the process of the structure reordering of disordered implanted silicon layers after thermal (800 degree C, 30 min) and pulse laser annealing have been carried out. The new laser method of annealing implanted layers has a number of interesting features which provide great efficiency and locality of semiconductor doping without considerable heating of the base material and redistribution of implanted impurities. On the base analysing of investigation of kinetics of layer photostimulated recrystallization and calculation of temperature fields the possible mechanisms of laser annealing are also discussed.
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页码：225 / 233
页数：9
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