TEMPERATURE AND FREQUENCY DEPENDENCIES OF EFFECTIVE DENSITY OF SURFACE STATES AT SILICON-SILICON NITRIDE INTERFACE

被引：4

|

作者：

LUBY, S

LOVJAGIN, RN

DOSHDIKOVA, N

ALEXANDROV, LN

CERVENAK, J

机构：

来源：

SOLID-STATE ELECTRONICS | 1970年 / 13卷 / 07期

关键词：

D O I：

10.1016/0038-1101(70)90106-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：1097 / +

页数：1

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