CONDUCTION PROPERTIES OF GE-GAAS1-XPX N-N HETEROJUNCTIONS

被引：60

|

作者：

CHANG, LL

机构：

来源：

SOLID-STATE ELECTRONICS | 1965年 / 8卷 / 09期

关键词：

D O I：

10.1016/0038-1101(65)90059-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：721 / &

相关论文

共 50 条

[1] ELECTRICAL-PROPERTIES OF N-N ZNSE/GAAS HETEROJUNCTIONS
BAWOLEK, EJ
WESSELS, BW
THIN SOLID FILMS, 1985, 131 (3-4) : 173 - 183
[2] PRESSURE DEPENDENCE OF BARRIER HEIGHTS IN GE-GAAS N-N HETEROJUNCTIONS
HOWARD, WE
FOWLER, AB
MCLEOD, D
JOURNAL OF APPLIED PHYSICS, 1968, 39 (03) : 1533 - &
[3] GE-SI N-N HETEROJUNCTIONS
YAMAGUCH.J
NUNOSHIT.M
HAMAKAWA, Y
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (08) : C213 - &
[4] GE-SI N-N HETEROJUNCTIONS
NUNOSHITA, M
ISHIZU, A
YAMAGUCHI, J
JAPANESE JOURNAL OF APPLIED PHYSICS, 1969, 8 (09) : 1133 - +
[5] ELECTRICAL AND OPTICAL PROPERTIES OF GE-SI N-N HETEROJUNCTIONS
KIMURA, T
NUNOSHITA, M
YAMAGUCHI, J
JAPANESE JOURNAL OF APPLIED PHYSICS, 1966, 5 (07) : 639 - +
[6] RECTIFICATION AT N-N GAAS - (GA, AL)AS HETEROJUNCTIONS
CHANDRA, A
EASTMAN, LF
ELECTRONICS LETTERS, 1979, 15 (03) : 90 - 91
[7] PHOTOSENSITIVITY SPECTRA OF GAPXAS1-X-GAAS N-N HETEROJUNCTIONS
ALFEROV, ZI
GAMAZOV, AA
ZIMOGORO.NS
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 2 (04): : 493 - &
[8] OPTICAL MODULATION OF CURRENT IN GE-SI N-N HETEROJUNCTIONS
YAWATA, S
ANDERSON, RL
PHYSICA STATUS SOLIDI, 1965, 12 (01): : 297 - &
[9] N-N SEMICONDUCTOR HETEROJUNCTIONS
OLDHAM, WG
MILNES, AG
SOLID-STATE ELECTRONICS, 1963, 6 (02) : 121 - 132
[10] CHARACTERISTICS OF ISOTYPE N GE-N GAAS HETEROJUNCTIONS
DEJAEGER, JC
SALMER, G
IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1980, 127 (04): : 207 - 211

← 1 2 3 4 5 →