Extended vacancy-type defects in silicon induced at low temperatures by electron irradiation

被引：4
|
作者：
Yamasaki, J
Ohno, Y
Takeda, S
Kimura, Y
机构：
[1] Osaka Univ, Grad Sch Sci, Dept Phys, Toyonaka, Osaka 5600043, Japan
[2] Biomed Engn Res Inst, Dept Biol Struct, Suita, Osaka 565, Japan
来源：
PHILOSOPHICAL MAGAZINE | 2003年 / 83卷 / 02期
关键词：
D O I：
10.1080/0141861021000026765
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have observed the formation of extended defects in silicon at low temperatures (below 25 K) by means of in-situ high-resolution transmission electron microscopy (HRTEM). The defects are distorted spheres, occasionally truncated by facets, less than 5 nm in diameter. These defects are stable up to 773 K, and they gradually shrink during annealing in the temperature range from 773 to 973 K. From the analysis of HRTEM images of the defects, we have suggested that the defects are voids formed via athermal migration of vacancies under electron irradiation.
引用
收藏
页码：151 / 163
页数：13
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