Erbium doped silicon for light emitting devices

被引：23
|
作者：
Michel, J [1 ]
Zheng, B [1 ]
Palm, J [1 ]
Ouellette, E [1 ]
Gan, F [1 ]
Kimerling, LC [1 ]
机构：
[1] MIT,DEPT MAT SCI & ENGN,CAMBRIDGE,MA 02139
来源：
RARE EARTH DOPED SEMICONDUCTORS II | 1996年 / 422卷
关键词：
D O I：
10.1557/PROC-422-317
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
收藏
页码：317 / 324
页数：8
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