Passively Q-Switched diode-pumped Yb:YAG laser using Cr4+-doped garnets

被引：0
|
作者：
Kalisky, Y [1 ]
Labbe, C [1 ]
Waichman, K [1 ]
Kravchik, L [1 ]
Rachum, U [1 ]
Deng, P [1 ]
Xu, J [1 ]
Dong, J [1 ]
Chen, W [1 ]
机构：
[1] DN Arava, Arava Laser Lab, IL-86800 Mishor Yamin, Israel
来源：
NONLINEAR MATERIALS: GROWTH, CHARACTERIZATION, DEVICES AND APPLICATIONS | 2002年 / 4628卷
关键词：
diode pumped lasers; passive Q-switching : Yb : YAG laser;
D O I：
10.1117/12.460816
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
We investigated the operation of a diode-pumped Yb:YAG laser passively Q-switched. by Cr4+:YAG, Cr4+:LuAG, and Cr4+:GSGG saturable absorbers. The results presented here are focused towards the design of a passively Q-switclied Yb:YAG microlaser. The free-running performance of both rod and a disk Yb:YAG is characterized and experimental parameters such as gain and loss are evaluated. These values. together with the value of the stimulated emission cross section. e.g. sigma(em)=3.3x10(-20) cm(2) were found to fit between our experimental results and an existing numerical model which relates the experimental and physical parameters to the minimal threshold pumping power. Q-switched pulses with maximum peak power of approximate to10.4-kW. and energy of approximate to0.5 mJ/pulse were extracted with 30 % extraction efficiency.
引用
收藏
页码：54 / 65
页数：12
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