The Reliability Evaluation of Cu Wire Bonding by Using Focus Ion Beam System

被引：0
|
作者：
Zhang XiaoWen [1 ]
Lin XiaoLing [1 ]
Chen Yuan [1 ]
机构：
[1] Natl Key Lab Sci & Techonl Reliabil Phys & Applic, Guangzhou, Guangdong, Peoples R China
来源：
2010 11TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY & HIGH DENSITY PACKAGING (ICEPT-HDP) | 2010年
关键词：
D O I：
10.1109/ICEPT.2010.5582717
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The cross sections of bonding have been made by using focus ion beam(FIB) system on the advanced chips packaged with BGA. Through the measurement of aluminum layer thickness under different bond force, the bonding reliability has been evaluated. The comparison has also been made on the interface of Au wire Bonding and Cu wire Bonding. Since the Cu wire Bonding process is more difficult, When it is used in the advanced chips, the bonding reliability should be evaluated.
引用
收藏
页码：1049 / 1052
页数：4
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