EELS study of near edge fine structure in AlxGa1-xN alloys

被引：0

作者：

Radtke, G ^{[1
]}

Bayle-Guillemaud, P ^{[1
]}

Thibault, J ^{[1
]}

机构：

[1] CEA, Dept Rech Fondamentale Mat Condensee, F-38054 Grenoble 9, France

来源：

ELECTRON MICROSCOPY AND ANALYSIS 2003 | 2004年 / 179期

关键词：

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

N and Al K electron-energy-loss spectra have been recorded in thick layers of Al-x Ga1-xN alloys (x = 0, 0.15, 0.46, 0.81, 1) in wurtzite structure. The evolution of near-edge-fine-structure (ELNES) with the composition is discussed in terms of modifications of the chemical and geometrical environment around the excited atoms. Some of the experimental results have been confirmed by ab initio calculations.

引用

页码：303 / 306

页数：4

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