Design and Modelling of 6T FinFET SRAM in 18nm

被引：0

作者：

Vijayalakshmi, V. ^{[1
]}

Naik, B. Mohan Kumar ^{[1
]}

机构：

[1] VTU, New Horizon Coll Engn, Dept ECE, Bangalore, Karnataka, India

来源：

PROCEEDINGS OF THE 3RD INTERNATIONAL CONFERENCE ON COMMUNICATION AND ELECTRONICS SYSTEMS (ICCES 2018) | 2018年

关键词：

SRAM; FinFET; Average Power;

D O I：

暂无

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

In this work FinFET based of 6T SRAM were designed and characterized these cells in terms of temperature and average power. This SRAMs were designed & stimulated in Cadence using 18nm FinFET technology.

引用

页码：208 / 211

页数：4

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