Effect of interface roughness on the density of states of finite barrier height quantum wells

被引：4

作者：

Thongnum, A. ^{[1
]}

Pinsook, U. ^{[2
]}

Khan-Ngern, S. ^{[1
]}

Sa-Yakanit, V. ^{[2
]}

机构：

[1] Khon Kaen Univ, Fac Sci, Dept Phys, Khon Kaen 40002, Thailand

[2] Chulalongkorn Univ, Fac Sci, Dept Phys, Ctr Excellence Forum Theoret Sci, Bangkok 10330, Thailand

来源：

SOLID STATE COMMUNICATIONS | 2008年 / 145卷 / 04期

关键词：

finite barrier height quantum wells; interface roughness; 2D density of states; Feynman path integrals;

D O I：

10.1016/j.ssc.2007.10.024

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We calculate the density of states of a 2D electron gas in finite barrier height quantum wells with the explicit inclusion of the interface roughness effect. By using Feynman path-integral method, the analytic expression is derived. The results show that the 2D density of states is dependent on the RMS of the fluctuation potential. The interface roughness causes localized states below the subband edge. We also apply the theory to model the finite barrier height quantum wells in AlxGa1-xAs/GaAs. Published by Elsevier Ltd.

引用

页码：207 / 211

页数：5

共 50 条

[31] Interface effect in coupled quantum wells
Hao, Ya-Fei
JOURNAL OF APPLIED PHYSICS, 2014, 115 (24)
[32] Effect of interface roughness and well width on differential reflection dynamics in InGaAs/InP quantum wells
Zhao, YG
Zou, YH
Wang, JJ
Qin, YD
Huang, XL
Masut, RA
Bensaada, A
APPLIED PHYSICS LETTERS, 1998, 72 (01) : 97 - 99
[33] Effect of barrier thickness on the interface and optical properties of InGaN/GaN multiple quantum wells
Kim, DJ
Moon, YT
Song, KM
Park, SJ
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (5A): : 3085 - 3088
[34] Effect of barrier thickness on the interface and optical properties of InGaN/GaN multiple quantum wells
Kim, D.-J.
Moon, Y.-T.
Song, K.-M.
Park, S.-J.
2001, Japan Society of Applied Physics (40):
[35] Total Density of States in Rectangular Quantum Wells
Jelev-Vlaev, S.
de Coss, Romeo
Del Rio de Santiago, A.
Martinez-Orozco, J. C.
PIERS 2009 BEIJING: PROGESS IN ELECTROMAGNETICS RESEARCH SYMPOSIUM, PROCEEDINGS I AND II, 2009, : 1361 - +
[36] Screening effect on polarizabilities of shallow donors and acceptors in finite-barrier quantum wells
Ilaiwi, KF
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1996, 193 (01): : 97 - 103
[37] QUANTUM-WELLS WITH LOCALIZED STATES AT ENERGIES ABOVE THE BARRIER HEIGHT - A FABRY-PEROT ELECTRON FILTER
SIRTORI, C
CAPASSO, F
FAIST, J
SIVCO, DL
CHU, SNG
CHO, AY
APPLIED PHYSICS LETTERS, 1992, 61 (08) : 898 - 900
[38] Finite-barrier height effect on the magnetoabsorption of a shallow donor in a quantum well wire
Zorkani, I
Mdaa, A
Elkhenifer, R
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1999, 215 (02): : 1005 - 1011
[39] INTERFACE ROUGHNESS OF QUANTUM WELLS STUDIED BY TIME-RESOLVED PHOTOLUMINESCENCE
JIANG, HX
ZHOU, P
SOLIN, SA
BAI, G
CHEMISTRY AND DEFECTS IN SEMICONDUCTOR HETEROSTRUCTURES, 1989, 148 : 361 - 366
[40] Interface roughness fractality effects on the electron mobility in semiconducting quantum wells
Palasantzas, G
Barnas, J
Geerligs, LJ
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1998, 209 (02): : 319 - 327

← 1 2 3 4 5 →