Development of GaAs-CCDs for X-ray detection

被引：0
|
作者：
Ludwig, J
Andersson, J
Bryman, D
Cresswell, J
Constable, M
Irsigler, R
Goeppert, R
Hornung, M
Passmore, S
Rogalla, M
Runge, K
Schwartz, C
机构：
[1] Univ Freiburg, D-79104 Freiburg, Germany
[2] IMC, Kista, Sweden
[3] TRIUMF, Vancouver, BC V6T 2A3, Canada
[4] Univ Glasgow, Glasgow G12 8QQ, Lanark, Scotland
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2001年 / 460卷 / 01期
关键词：
CCD; GaAs; X-rays; medical imaging;
D O I：
10.1016/S0168-9002(00)01098-6
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Measurements of the performance of a Resistive Gate CCD will be shown and discussed. A short description of structure and layout will be followed by X-ray spectra, linearity, noise, SNR and energy resolution. A charge transfer efficiency of calculated with the classical method of 0.99958 +/- 0.00002 was reached. Simulation and layout of a newly designed X-ray Schottky CCD will be presented. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：72 / 75
页数：4
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