Effect of SHI irradiation on the morphology of SnO2 thin film prepared by reactive thermal evaporation

被引：42
|
作者：
Abhirami, K. M. [1 ]
Matheswaran, P. [1 ]
Gokul, B. [1 ]
Sathyamoorthy, R. [1 ]
Kanjilal, D. [2 ]
Asokan, K. [2 ]
机构：
[1] Kongunadu Arts & Sci Coll, PG & Res Dept Phys, Coimbatore 641029, Tamil Nadu, India
[2] Inter Univ Accelerator Ctr, New Delhi 110067, India
来源：
VACUUM | 2013年 / 90卷
关键词：
SnO2; SHI irradiation; AFM; FE-SEM; Roughness; HEAVY-ION IRRADIATION; TIN OXIDE; MECHANISM; GROWTH;
D O I：
10.1016/j.vacuum.2012.09.013
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
SnO2 thin films prepared by reactive thermal evaporation on glass substrates were subjected to 120 MeV Ag9+ ion irradiation. The surface topography progression using the swift heavy ion irradiation was studied. It shows creation of unique surface morphologies and regular structures on the surface of the SnO2 thin film at particular fluences. Field Emission Scanning electron microscopy (FE-SEM) and Atomic force microscopy (AFM) are used for investigating the effect of Ag ions at different fluences on the surface of SnO2. The morphological changes suggest that ion assisted/induced diffusion process play a significant role in the evolution of nanostructures on SnO2 surface. The roughness increases from 9.4 to 14.9 with fluence upto 1 x 10(12) ions/cm(2) and beyond this fluence, the roughness decreases. Ion-beam induced recrystallization at lower fluences and amorphization or disordering of crystals at higher fluences are understood based on the thermal spike model. (C) 2012 Elsevier Ltd. All rights reserved.
引用
收藏
页码：39 / 43
页数：5
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