Transport properties of a quasi-two-dimensional electron gas in a SiGe/Si/SiGe quantum well including temperature and magnetic field effects

被引：1
|
作者：
Nguyen Quoc Khanh [1 ]
Nguyen Minh Quan [1 ]
机构：
[1] Natl Univ Ho Chi Minh City, Dept Theoret Phys, Ho Chi Minh City, Vietnam
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2013年 / 64卷
关键词：
Scattering mechanisms; Magnetoresistance; Quantum well; MOBILITY;
D O I：
10.1016/j.spmi.2013.09.036
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We investigate the mobility and resistivity of a quasi-two-dimensional electron gas in a SiGe/Si/SiGe quantum well at arbitrary temperatures for two cases: with and without in-plane magnetic field. We consider two scattering mechanisms: remote charged-impurity and interface-roughness scattering. We study the dependence of transport properties on the carrier density, layer thickness, magnetic field and temperature. Our results can be used to obtain information about the scattering mechanisms in the SiGe/Si/SiGe quantum well. (C) 2013 Elsevier Ltd. All rights reserved.
引用
收藏
页码：245 / 250
页数：6
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