Effect of Electrode Material on the Polarization Switching Kinetics of Hf0.5Zr0.5O2 Film

被引：6
|
作者：
Lee, Dong Hyun [1 ]
Park, Geun Hyeong [1 ]
Kim, Se Hyun [1 ]
Yang, Kun [1 ]
Lee, Jaewook [1 ]
Choi, Hyojun [1 ]
Lee, Younghwan [2 ]
Ryu, Jin Ju [3 ,4 ]
Lee, Je In [5 ]
Kim, Gun Hwan [3 ,6 ]
Park, Min Hyuk [1 ]
机构：
[1] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea
[2] Seoul Natl Univ, Res Inst Adv Mat, Seoul 08826, South Korea
[3] Korea Res Inst Chem Technol KRICT, Div Adv Mat, Daejeon 34114, South Korea
[4] Yonsei Univ, Dept Mat Sci & Engn, Seoul 03722, South Korea
[5] Pusan Natl Univ, Sch Mat Sci & Engn, Busan 46241, South Korea
[6] Yonsei Univ, Sch Syst & Semicond Engn, Seoul 03722, South Korea
来源：
IEEE ELECTRON DEVICE LETTERS | 2023年 / 44卷 / 09期
基金：
新加坡国家研究基金会;
关键词：
Switches; Electrodes; Kinetic theory; Tin; Capacitors; Pulse measurements; Grain size; Ferroelectrics; Hafnium zirconium oxide; ferroelectric memory; domain dynamics;
D O I：
10.1109/LED.2023.3294522
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Electrode materials can significantly impact the chemical and physical properties and polarization switching kinetics of ferroelectric Hf0.5Zr0.5O2 (HZO) films deposited through atomic layer deposition. In this study, the effect of various electrode materials (TiN, Mo, and W) on the microstructure and polarization switching properties of HZO films is investigated. The nucleation-limited switching model indicates that the Mo electrode is beneficial in the case of small device-to-device variation, whereas W and TiN electrodes are advantageous for accomplishing high-speed operations.
引用
收藏
页码：1440 / 1443
页数：4
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