Investigation of low loss and high reliability encapsulation technology in large-area, high-power semiconductor devices

被引:0
|
作者
Morita, Toshiaki [1 ]
Kato, Mitsuo [2 ]
Onuki, Jin [3 ]
Onose, Hidekatsu [1 ]
Matsuura, Nobuyoshi [2 ]
Sakurada, Shuroku [1 ]
机构
[1] Hitachi Research Laboratory, Hitachi Ltd., 1-1 Omika-clio 7-chome, Hitachi, Ibaraki 319-1292, Japan
[2] Semiconductor and Integrated Circuits Division, Hitachi Ltd., Ill Nishiyokote-cho, Takasaki, Gtinma 370-0021, Japan
[3] Hitachi Works, Hitachi Ltd., 1-1 Saiwai-cho 3-chome, Hitachi, Ibaraki 317-8511, Japan
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:6232 / 6236
相关论文
共 50 条
  • [21] High-Power Emission via Large-Area VCSELs With Single High-Order Mode Operation
    Torrelli, Valerio
    Gullino, Alberto
    Tibaldi, Alberto
    Bertazzi, Francesco
    Goano, Michele
    Debernardi, Pierluigi
    IEEE PHOTONICS JOURNAL, 2024, 16 (02): : 1 - 7
  • [22] HIGH-VOLTAGE, LARGE-AREA PLANAR DEVICES
    SELIM, FA
    ELECTRON DEVICE LETTERS, 1981, 2 (09): : 219 - 221
  • [23] High-power microwave discharge for producing large-area surface-wave plasmas
    Chen Zhaoquan
    Liu Minghai
    Chen Wei
    Luo Zhiqing
    Tang Liang
    Lan Chaohui
    Hu Xiwei
    ISAPE 2008: THE 8TH INTERNATIONAL SYMPOSIUM ON ANTENNAS, PROPAGATION AND EM THEORY, PROCEEDINGS, VOLS 1-3, 2008, : 567 - 570
  • [24] LARGE-AREA VARACTOR DIODE FOR ELECTRICALLY TUNABLE, HIGH-POWER UHF BANDPASS FILTER
    SWARTZ, GA
    WERN, DW
    ROBINSON, PH
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (11) : 2146 - 2151
  • [25] MODELING OF HIGH-SPEED AND HIGH-POWER SEMICONDUCTOR-DEVICES
    ANDERSSON, M
    ACTA POLYTECHNICA SCANDINAVICA-ELECTRICAL ENGINEERING SERIES, 1994, (79): : 1 - 45
  • [26] HIGH-POWER SOLID-STATE SEMICONDUCTOR DEVICES
    MARSHALL, S
    SOLID STATE TECHNOLOGY, 1973, 16 (02) : 23 - 23
  • [27] Optimized cooling systems for high-power semiconductor devices
    Baumann, H
    Heinemeyer, P
    Staiger, W
    Töpfer, M
    Unger, K
    Müller, D
    IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, 2001, 48 (02) : 298 - 306
  • [28] The present state of the art in high-power semiconductor devices
    Satoh, K
    Yamamoto, M
    PROCEEDINGS OF THE IEEE, 2001, 89 (06) : 813 - 821
  • [29] SiC - a semiconductor for high-power, high-temperature and high-frequency devices
    Janzen, E.
    Kordina, O.
    Henry, A.
    Chen, W.M.
    Son, N.T.
    Monemar, B.
    Sorman, E.
    Bergman, P.
    Harris, C.I.
    Yakimova, R.
    Tuominen, M.
    Konstantinov, A.O.
    Hallin, C.
    Hemmingsson, C.
    Physica Scripta T, 1994, T54 : 283 - 290
  • [30] SIC - A SEMICONDUCTOR FOR HIGH-POWER, HIGH-TEMPERATURE AND HIGH-FREQUENCY DEVICES
    JANZEN, E
    KORDINA, O
    HENRY, A
    CHEN, WM
    SON, NT
    MONEMAR, B
    SORMAN, E
    BERGMAN, P
    HARRIS, CI
    YAKIMOVA, R
    TUOMINEN, M
    KONSTANTINOV, AO
    HALLIN, C
    HEMMINGSON, C
    PHYSICA SCRIPTA, 1994, 54 : 283 - 290