Anodic oxidation for quality control of buffer layers in GaAs epitaxial structures on semiinsulating substrates

被引：0
|
作者：
机构：
来源：
Mikroelektron | / 4卷 / 287-290期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] Plasma anodic oxidation of semiinsulating GaAs
    Pincik, E
    Gmucova, K
    Bartos, J
    Kucera, M
    Jergel, M
    Brunner, R
    APPLIED SURFACE SCIENCE, 1996, 93 (02) : 119 - 130
  • [2] UNDOPED SEMIINSULATING GAAS EPITAXIAL LAYERS AND THEIR CHARACTERIZATION
    IMAIZUMI, T
    OKAZAKI, H
    YAMAMOTO, H
    ODA, O
    JOURNAL OF APPLIED PHYSICS, 1994, 76 (12) : 7957 - 7965
  • [3] Characteristics of AlN buffer layers for GaAs epitaxial growths on MnZn ferrite substrates
    Hirato, K
    Fujioka, H
    Ito, S
    Ohta, J
    Oshima, M
    THIN SOLID FILMS, 2003, 435 (1-2) : 131 - 134
  • [4] Diagnosing the buffer layers of multilayer epitaxial structures of GaAs by a photoluminescence method
    Belousov, PS
    Guroshev, VI
    Tager, AS
    Fedorov, YY
    SEMICONDUCTORS, 1996, 30 (12) : 1151 - 1153
  • [5] INTERFERENCE EFFECTS IN PHOTOREFLECTANCE OF EPITAXIAL LAYERS GROWN ON SEMIINSULATING SUBSTRATES
    LIPSANEN, HK
    AIRAKSINEN, VM
    APPLIED PHYSICS LETTERS, 1993, 63 (21) : 2863 - 2865
  • [6] TRANSITIONAL LAYERS FORMED DURING EPITAXY OF GAAS ON SEMIINSULATING SUBSTRATES
    AGRAFENIN, YV
    KRAVCHENKO, AF
    MARONCHUK, YE
    SHERSTYAKOV, AP
    SHERSTYAKOVA, VN
    INORGANIC MATERIALS, 1976, 12 (01) : 30 - 32
  • [7] Influence of the deposition techniques on the quality of the epitaxial buffer layers on textured Ni substrates
    Fabbri, F
    Boffa, V
    Celentano, G
    Ciontea, L
    Galluzzi, V
    Petrisor, T
    Ceresara, S
    Scardi, P
    INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 1999, 13 (9-10): : 1041 - 1048
  • [8] Buffer layers of InGaAs on porous GaAs substrates
    Buzynin, Yu.N.
    Vostokov, N.B.
    Gaponova, D.M.
    Gusev, S.A.
    Drozdov, Yu.N.
    Zvonkov, B.N.
    Krasil'nik, Z.F.
    Izvestiya Akademii Nauk. Ser. Fizicheskaya, 2003, 67 (04): : 579 - 583
  • [9] Effect of buffer layer structure on the structural properties of GaAs epitaxial layers grown on GaP substrates
    Imaizumi, Mitsuru
    Hirotani, Masumi
    Soga, Tetsuo
    Umeno, Masayoshi
    JOURNAL OF CRYSTAL GROWTH, 2019, 507 : 288 - 294
  • [10] CHARACTERIZATION OF GAAS GROWN ON SI EPITAXIAL LAYERS ON GAAS SUBSTRATES
    ADOMI, K
    STRITE, S
    MORKOC, H
    NAKAMURA, Y
    OTSUKA, N
    JOURNAL OF APPLIED PHYSICS, 1991, 69 (01) : 220 - 225
12345