Novel preparation of P-N junction mesa diodes by silicon-wafer direct bonding (SDB)

被引：0
|
作者：
机构：
[1] Yeh, Ching-Fa
[2] Hwangleu, Shyang
来源：
Yeh, Ching-Fa | 1600年 / 31期
关键词：
537 Heat Treatment - 712 Electronic and Thermionic Materials - 714 Electronic Components and Tubes - 802 Chemical Apparatus and Plants; Unit Operations; Unit Processes;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
14
引用
收藏
相关论文
共 50 条
  • [31] Silicon fiber with p-n junction
    Homa, D.
    Cito, A.
    Pickrell, G.
    Hill, C.
    Scott, B.
    APPLIED PHYSICS LETTERS, 2014, 105 (12)
  • [32] Formation of p-n junction by diffusion bonding
    Ohashi, Osamu
    Yoshioka, Takayuk
    Hashimoto, Masayasu
    Nagai, Terutomo
    Welding Research Abroad, 2000, 46 (12):
  • [33] Formation of p-n junction by diffusion bonding
    Ohashi, Osamu
    Yoshioka, Takayuki
    Hashimoto, Masayasu
    Nagai, Terutomo
    2000, Japan Welding Soc, Tokyo, Japan (18):
  • [34] Ge/Si p-n Diode Fabricated by Direct Wafer Bonding and Layer Exfoliation
    Gity, F.
    Byun, K. Y.
    Lee, K. -H.
    Cherkaoui, K.
    Hayes, J. M.
    Morrison, A. P.
    Colinge, C.
    Corbett, B.
    SILICON COMPATIBLE MATERIALS, PROCESSES, AND TECHNOLOGIES FOR ADVANCED INTEGRATED CIRCUITS AND EMERGING APPLICATIONS 2, 2012, 45 (06): : 131 - 139
  • [35] Current transients in almost-ideal Czochralski silicon p-n junction diodes
    Poyai, A
    Simoen, E
    Claeys, C
    APPLIED PHYSICS LETTERS, 1999, 75 (21) : 3342 - 3344
  • [36] Improved extraction of the activation energy of the leakage current in silicon p-n junction diodes
    Poyai, A
    Simoen, E
    Claeys, C
    Czerwinski, A
    Gaubas, E
    APPLIED PHYSICS LETTERS, 2001, 78 (14) : 1997 - 1999
  • [37] Impurity profile measurement in p-n junction diodes
    Mitra, V., 1600, (71):
  • [38] GaN nanorod Schottky and p-n junction diodes
    Deb, Parijat
    Kim, Hogyoung
    Qin, Yexian
    Lahiji, Roya
    Oliver, Mark
    Reifenberger, Ronald
    Sands, Timothy
    NANO LETTERS, 2006, 6 (12) : 2893 - 2898
  • [39] SIMULATION OF SWITCHING BEHAVIOUR OF P-N JUNCTION DIODES
    OLIVE, G
    SIMULATION, 1971, 16 (06) : 271 - &
  • [40] Fast chaos with slow p-n junction diodes
    Mykolaitis, G.
    Miskinis, R.
    Bumeliene, S.
    Tamaseviciute, E.
    Tamasevicius, A.
    ACTA PHYSICA POLONICA A, 2008, 113 (03) : 971 - 974
12345