High purity and semi-insulating 4H-SiC crystals grown by physical vapor transport

被引：0
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作者：
Augustine, G. [1 ]
Hobgood, H.McD. [1 ]
Balakrishna, V. [1 ]
Dunne, G.T. [1 ]
Hopkins, R.H. [1 ]
Thomas, R.N. [1 ]
Doolittle, W.A. [1 ]
Rohatgi, A. [1 ]
机构：
[1] Northrop Grumman Corp, Pittsburgh, United States
来源：
Materials Science Forum | 1998年 / 264-268卷 / pt 1期
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