High-peak-power pulsed operation of 2.0 μm (AlGaln)(AsSb) quantum-well ridge waveguide diode lasers

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作者：
Eichhorn, M. [1 ]
Rattunde, M. [2 ]
Schmitz, J. [2 ]
Kaufel, G. [2 ]
Wagner, J. [2 ]
机构：
[1] German-French Research Institute of Saint-Louis ISL, 5 R. du Gén. Cassagnou, F-68301 Saint-Louis, France
[2] Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, D-79108 Freiburg, Germany
来源：
Journal of Applied Physics | 2006年 / 99卷 / 05期
关键词：
We have characterized 2.0 μm (aluminium-gallium-indium)(arsenide-antimonide) quantum-well diode lasers in pulsed operation (20-60 ns). A peak power of 1.25 W could be achieved. The near-field distribution on the output facet and the spectral output have been analyzed. Single transverse mode operation can only be maintained at low pulse currents. Above a certain current limit higher order modes occur and fluctuations between these modes have been resolved on a 10 ns time scale. The threshold for thermal and optical damage was investigated for ridge waveguide widths of 6; 8; and 16 μm. No systematic damage threshold could be determined up to current densities as high as 200 kA/cm2. © 2006 American Institute of Physics;
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