In-plane anisotropy characteristics of GaN epilayers grown on A -face sapphire substrates

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Centre De Recherche Sur l'Htro-Epitaxie Et Ses Applications, Centre National De La Recherche Scientifique , Rue B. Gregory, F-06560 Valbonne, Sophia Antipolis, France [1 ]
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Journal of Applied Physics | 2008年 / 104卷 / 11期
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Sapphire;
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