Doping Achieves High Thermoelectric Performance in SnS: A First-Principles Study

被引：0
|
作者：
Li, Zhi [1 ]
Su, Xianli [1 ]
Tang, Xinfeng [1 ]
机构：
[1] State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan,430070, China
来源：
ACS Applied Materials and Interfaces | 2022年 / 14卷 / 05期
关键词：
Compilation and indexing terms; Copyright 2024 Elsevier Inc;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Calculations - Carrier lifetime - Defects - Heat transfer - Hole concentration - IV-VI semiconductors - Phonons - Sulfur compounds - Thermoelectricity - Tin compounds
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页码：6916 / 6925
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