Tungsten disulfide passively Q-switched Nd:GdNbO4 laser under 879 nm direct pumping

被引：0

作者：

Ma, Yufei ^{[1
]}

Dang, Hongtao ^{[1
]}

Ding, Shoujun ^{[2
,4
]}

Zheng, Xiaohai ^{[1
]}

Zhang, Qingli ^{[3
]}

机构：

[1] Shaanxi Engineering Research Center of Controllable Neutron Sources, School of Science, Xijing University, Xi'an,710123, China

[2] School of Mathematics and Physics, Anhui University of Technology, Maanshan,243032, China

[3] The Key Laboratory of Photonic Devices and Materials, Anhui Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Hefei,230031, China

[4] Key Laboratory of Optoelectronic Materials Chemistry and Physics, Chinese Academy of Sciences, Fujian,350002, China

来源：

Infrared Physics and Technology | 2021年 / 112卷

关键词：

Q switching - Sulfur compounds - Tungsten compounds - Neodymium compounds - Pumping (laser) - Pulse repetition rate - Q switched lasers - Gadolinium compounds;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

This paper reports a tungsten disulfide (WS2) passively Q-switched 1066 nm Nd:GdNbO4 laser under an 879 nm diode directly pumping into emitting level for the first time. In the passively Q-switched operation, an average output power of 220 mW, pulse repetition rate of 143 kHz, pulse width of 376 ns, single pulse energy of 1.55 μJ and pulse peak power of 4.17 W were achieved. © 2020 Elsevier B.V.

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