Indirect avalanche event detection of Single Photon Avalanche Diode implemented in CMOS FDSOI technology

被引：0
|
作者：
Chaves de Albuquerque, Tulio [1 ]
Issartel, Dylan [1 ]
Clerc, Raphaël [2 ]
Pittet, Patrick [1 ]
Cellier, Rémy [1 ]
Golanski, Dominique [3 ]
Jouan, Sébastien [3 ]
Cathelin, Andreia [3 ]
Calmon, Francis [1 ]
机构：
[1] INL – Institut des Nanotechnologies de Lyon, UMR CNRS 5270, Université de Lyon, France
[2] LHC – Laboratoire Hubert Curien, UMR CNRS 5516, Université Jean Monnet & Institut d'Optique Graduate School, Saint Etienne, France
[3] STMicroelectronics, Crolles, France
来源：
Solid-State Electronics | 2020年 / 163卷
基金：
加拿大自然科学与工程研究理事会;
关键词：
Body biasing - Capacitive couplings - Event detection - Fully depleted silicon-on-insulator - Novel architecture - Processing circuitry - Single photon avalanche diode - Transistor channels;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
9
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