ABSOLUTE MEASUREMENT OF LATTICE SPACING D(220) SILICON CRYSTAL IN FLOATING-ZONE

被引:16
|
作者
FUJIMOTO, H
NAKAYAMA, K
TANAKA, M
MISAWA, G
机构
[1] National Research Laboratory of Metrology, Ibaraki, 305
关键词
AVOGADRO CONSTANT; LATTICE SPACING; FUNDAMENTAL CONSTANT; X-RAY INTERFEROMETER;
D O I
10.1143/JJAP.34.5065
中图分类号
O59 [应用物理学];
学科分类号
摘要
The lattice spacing d(220) of a silicon crystal of National Research Laboratory of Metrology has been measured with a new combined X-ray and optical interferometer, with relative uncertainty of 0.16 ppm. This value is in good agreement with other reported values, whereas the ratio of molar mass M to density rho measured for this crystal shows discrepancy of around 3 ppm from previously reported ratios. It seems that the conventional route to determining the Avogradro constant from M, rho and d(220) Will require a new characterization technique to estimate the number of silicon atoms in a unit cell volume.
引用
收藏
页码:5065 / 5069
页数:5
相关论文
共 50 条
  • [11] Numerical simulation of point defect transport in floating-zone silicon single crystal growth
    Larsen, TL
    Jensen, L
    Lüdge, A
    Riemann, H
    Lemke, H
    JOURNAL OF CRYSTAL GROWTH, 2001, 230 (1-2) : 300 - 304
  • [12] LITHIUM DRIFTED SILICON DETECTOR FABRICATION ON GETTERED FLOATING-ZONE SILICON
    WALTON, JT
    WONG, YK
    DERHACOBIAN, N
    HALLER, EE
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1994, 41 (04) : 1031 - 1036
  • [13] Measurement repetitions of the Si(220) lattice spacing
    Cavagnero, G
    Fujimoto, H
    Mana, G
    Massa, E
    Nakayama, K
    Zosi, G
    METROLOGIA, 2004, 41 (01) : 56 - 64
  • [14] Effect of axisymmetric magnetic fields on heat flow and interfaces in floating-zone silicon crystal growth
    Lan, CW
    MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING, 1998, 6 (04) : 423 - 445
  • [15] Three-dimensional simulation of Marangoni flow and interfaces in floating-zone silicon crystal growth
    Lan, CW
    Chian, JH
    JOURNAL OF CRYSTAL GROWTH, 2001, 230 (1-2) : 172 - 180
  • [16] Study on the Radial Resistivity Variation of the Gas Doped Floating-Zone Single-Crystal Silicon
    Zhang, Xuenan
    Gao, Shuliang
    Zhang, XuGuang
    Li, Jianhong
    Wang, Yanjun
    Li, Xiang
    Shen, Haoping
    Wang, Jihui
    CHINA POSTDOCTORAL FORUM ON MATERIALS SCIENCE AND ENGINEERING, 2011, 266 : 34 - +
  • [17] Modeling of ellipsoid mirror furnace for floating-zone crystal growth
    Lan, CW
    Tsai, CH
    JOURNAL OF CRYSTAL GROWTH, 1997, 173 (3-4) : 561 - 573
  • [18] MICRODEFECTS IN FLOATING-ZONE SILICON - INFLUENCE OF GROWTH-PARAMETERS
    TRUBITSYN, YV
    CHERVONYI, IF
    NEIMARK, KN
    INORGANIC MATERIALS, 1994, 30 (04) : 530 - 531
  • [19] Crystal growth of CuFeO2 by the floating-zone method
    Univ of Tokyo, Tokyo, Japan
    J Cryst Growth, 1-2 (189-192):
  • [20] CHARACTERIZATION OF SWIRL DEFECTS IN FLOATING-ZONE SILICON-CRYSTALS
    PETROFF, PM
    DEKOCK, AJR
    JOURNAL OF CRYSTAL GROWTH, 1975, 30 (01) : 117 - 124