SINUSOIDAL GATE VOLTAGES FOR A 3-GATE SINGLE-ELECTRON PUMP

被引：3
|
作者：
FUKUSHIMA, A
IWASA, A
YOSHIHIRO, K
KINOSHITA, J
ENDO, T
机构：
[1] Electrotechnical Laboratory, Tsukuba-shi, Ibaraki 305, 1-1-4, Umezono
来源：
IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT | 1995年 / 44卷 / 02期
关键词：
D O I：
10.1109/19.377907
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The characteristics of a three-gate single electron pump with four small tunnel junctions have been studied by simple calculations. Comparing the charging energy of a three-gate pump for different configurations of excess electrons, we obtained the equilibrium energy planes in a three dimensional (3D) gate-voltage space. The polygon formed by the union of the equilibrium energy planes fog all configurations nearest to a given configuration is depicted in the 3D space. Inside the polygon, the configuration of excess electrons is stable. The pump can be operated by applying a set of sinusoidally varying gate voltages, whose trajector in the 3D space is presented.
引用
收藏
页码：561 / 563
页数：3
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